Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOxReRAM
- T. Stecconi
- Y. Popoff
- et al.
- 2022
- ESSDERC 2022
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17 results for Valeria Bragaglia
Structural Assessment of Interfaces in Projected Phase-Change Memory
- Valeria Bragaglia
- Vara Prasad Jonnalagadda
- et al.
- 2022
- Nanomaterials
A back-end-of-line compatible, ferroelectric analog non-volatile memory
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- IMW 2021
A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- EDTM 2021
Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights
- Laura Begon-Lours
- Mattia Halter
- et al.
- 2021
- IEEE J-EDS
State dependence and temporal evolution of resistance in projected phase change memory
- Benedikt Kersting
- Vladimir Ovuka
- et al.
- 2020
- Scientific Reports
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
- Mattia Halter
- Laura Begon-Lours
- et al.
- 2020
- ACS AMI