Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors
- E. Zanoni
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
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3 results for Paolo Pavan
Extension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s
- Enrico Zanoni
- Emmanuel F. Crabbé
- et al.
- 1993
- IEEE Electron Device Letters
Recommended Methods to Study Resistive Switching Devices
- Mario Lanza
- H.-S. Philip Wong
- et al.
- 2018
- Advanced Electronic Materials