ALD TaN barrier for enhanced performance with low contact resistance for 14 nm Technology Node Cu Interconnects
- Joyeeta Nag
- Brian A. Cohen
- et al.
- 2015
- ECS Meeting 2015 Phoenix
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Impact of Phase-Change Memory Drift on Energy Efficiency and Accuracy of Analog Compute-in-Memory Deep Learning Inference (Invited)
- Martin M. Frank
- Ning Li
- et al.
- 2023
- IRPS 2023
Impact of Nanosecond Laser Anneal on PVD Ru Films
- D. Sil
- Yasir Sulehria
- et al.
- 2021
- IITC 2021
Dual Damascene BEOL Extendibility With Cu Reflow / Selective TaN And Co/Cu Composite
- P. Bhosale
- N. Lanzillo
- et al.
- 2021
- VLSI Technology 2021
Composite Interconnects for High-Performance Computing beyond the 7nm Node
- P. Bhosale
- S. Parikh
- et al.
- 2020
- VLSI Technology 2020
Performance of ultrathin alternative diffusion barrier metals for next - Generation BEOL technologies, and their effects on reliability
- Takeshi Nogami
- M. Chae
- et al.
- 2014
- IITC/AMC 2014
Advanced metal and dielectric barrier cap films for Cu low k interconnects
- Deepika Priyadarshini
- Son Nguyen
- et al.
- 2014
- IITC/AMC 2014
CVD-Co/Cu(Mn) integration and reliability for 10 nm node
- Takeshi Nogami
- M. He
- et al.
- 2013
- IITC 2013
Electrical properties and reliability of ALD TaN barrier for sub-90nmPitch Cu interconnects
- Tibor Bolom
- J. Lee
- et al.
- 2013
- ADMETA 2013
Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
- A. Simon
- Tibor Bolom
- et al.
- 2013
- IRPS 2013