An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCMHuai-Yu ChengW. Chienet al.2017IEDM 2017
A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCMNanbo GongW. Chienet al.2020VLSI Technology 2020
Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point MemoryHuai-Yu ChengI. Kuoet al.2020VLSI Technology 2020
Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM ApplicationsW. ChienH. Hoet al.2019VLSI Technology 2019
Solution for PCM and OTS intermixing on cross-point phase change memoryW. ChienLynne Gignacet al.2019IMW 2019
Superb endurance and appropriate Vth of PCM pillar cell using buffer layer for 3D cross-point memoryN. GangW. Chienet al.2019IMW 2019
High endurance self-heating OTS-PCM pillar cell for 3D stackable memoryC. YehW. Chienet al.2018VLSI Technology 2018