Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- ECSSMEQ 2014
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53 results for Pouya Hashemi
Plasma post-oxidation for high mobility strained-Ge pFETs with aggressively scaled high-κ dielectrics
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- ECSSMEQ 2014
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
Measurement and analysis of gate-induced drain leakage in short-channel strained silicon germanium-on-insulator pMOS FinFETs
- Karthik Balakrishnan
- Pouya Hashemi
- et al.
- 2014
- DRC 2014
Record hole mobility at high vertical fields in planar strained germanium on insulator with asymmetric strain
- Winston Chern
- Pouya Hashemi
- et al.
- 2014
- IEEE Electron Device Letters
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- A. Khakifirooz
- R. Sreenivasan
- et al.
- 2013
- S3S 2013
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Circuits 2013
High-performance Si1-xGex channel on insulator trigate PFETs featuring an implant-free process and aggressively-scaled fin and gate dimensions
- P. Hashemi
- M. Kobayashi
- et al.
- 2013
- VLSI Technology 2013
High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
- Winston Chern
- Pouya Hashemi
- et al.
- 2012
- IEDM 2012
High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET
- K. Cheng
- A. Khakifirooz
- et al.
- 2012
- IEDM 2012