Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- VLSI Technology 2012
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53 results for Pouya Hashemi
Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- Pouya Hashemi
- Winston Chern
- et al.
- 2012
- IEEE Electron Device Letters
High hole-mobility strained-Ge/Si 0.6Ge 0.4 P-MOSFETs with high-κ/metal gate: Role of strained-Si cap thickness
- Pouya Hashemi
- Judy L. Hoyt
- 2012
- IEEE Electron Device Letters