Publications

54 results for Pouya Hashemi

High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
- - Winston Chern
  - Pouya Hashemi
  - et al.
- 2012
- IEDM 2012
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- - A. Khakifirooz
  - Kangguo Cheng
  - et al.
- 2012
- VLSI Technology 2012
Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- - Pouya Hashemi
  - Winston Chern
  - et al.
- 2012
- IEEE Electron Device Letters
High hole-mobility strained-Ge/Si _0.6Ge _0.4 P-MOSFETs with high-κ/metal gate: Role of strained-Si cap thickness
- - Pouya Hashemi
  - Judy L. Hoyt
- 2012
- IEEE Electron Device Letters