Electron mobility dependence on annealing temperature of W/HfO 2 gate stacks: The role of the interfacial layer
- A.C. Callegari
- P. Jamison
- et al.
- 2006
- Journal of Applied Physics
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13 results for Carlo A. Pignedoli
Disproving a silicon analog of an alkyne with the aid of topological analyses of the electronic structure and ab initio molecular dynamics calculations
- Carlo A. Pignedoli
- Alessandro Curioni
- et al.
- 2005
- ChemPhysChem
Interface engineering for enhanced electron mobilities in W/HfO 2 gate stacks
- A.C. Callegari
- P. Jamison
- et al.
- 2004
- IEDM 2004