A porous SiCOH dielectric with k=2.4 for high performance BEOL interconnects
- S. Gates
- A. Grill
- et al.
- 2006
- ADMETA 2006
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42 results for M.H. Sherwood
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devices
- K. Ida
- S. Nguyen
- et al.
- 2005
- AMC 2005
Low-k/copper integration scheme suitable for ULSI manufacturing from 90nm to 45nm nodes
- T. Nogami
- S. Lane
- et al.
- 2005
- Optics East 2005
Lower-k SiCOH integration for 65 nm ground rules
- T. Nogami
- S. Lane
- et al.
- 2005
- VMIC 2005
NMR analysis of chemically amplified resist films
- Hiroshi Ito
- M.H. Sherwood
- 1999
- SPIE Advances in Resist Technology and Processing 1999
Effect of oxygen plasma and thermal oxidation on shallow nitrogen-vacancy centers in diamond
- M. Kim
- H.J. Mamin
- et al.
- 2014
- Applied Physics Letters
Investigation of polymer-bound PAGs: Synthesis, characterization and initial structure/property relationships of anion-bound resists
- Robert D. Allen
- Phillip J. Brock
- et al.
- 2009
- J. Photopolym. Sci. Tech.
Novel fluoropolymers for use in 157 nm lithography
- Hiroshi Ito
- G.M. Wallraff
- et al.
- 2001
- J. Photopolym. Sci. Tech.
Fundamental aspects of norbornene-maleic anhydride co- and terpolymers for 193 nm lithography: Polymerization chemistry and polymer properties
- Hiroshi Ito
- Dolores C. Miller
- et al.
- 2000
- J. Photopolym. Sci. Tech.
Investigation of deep UV resists by NMR: Residual casting solvents, chemistries, and PAG decomposition in film
- Hiroshi Ito
- Mark Sherwood
- 1999
- J. Photopolym. Sci. Tech.