Doping of germanium nanowires grown in presence of PH3
- E. Tutuc
- J.O. Chu
- et al.
- 2006
- Applied Physics Letters
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118 results for Supratik Guha
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Dual-gate silicon nanowire transistors with nickel silicide contacts
- J. Appenzeller
- J. Knoch
- et al.
- 2006
- IEDM 2006
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
Negative differential resistance in ultrathin Ge-on-insulator FETs
- D. Kazazis
- A. Zaslavsky
- et al.
- 2006
- Semiconductor Science and Technology
Charge defects, Vt shifts, and the solution to the high-k metal gate n-MOSFET problem
- Supratik Guha
- Vijay Narayanan
- et al.
- 2006
- Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2006
Effect of Ge surface nitridation on the Ge/HfO2/Al MOS devices
- Reenu Garg
- Durga Misra
- et al.
- 2006
- IEEE T-DMR
Realization of a linear germanium nanowire p-n junction
- Emanuel Tutuc
- Joerg Appenzeller
- et al.
- 2006
- Nano Letters
Negative differential resistance in ultra-thin Ge-on-insulator FETs
- D. Kazazis
- A. Zaslavsky
- et al.
- 2006
- ISTDM 2006
Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires
- Hemanth Jagannathan
- Yoshio Nishi
- et al.
- 2006
- Applied Physics Letters