Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
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68 results for Terry A. Spooner
BEOL integration of highly damage -resistant porous ultra low-k material using direct CMP and via-first process
- T. Iijima
- Q. Lin
- et al.
- 2006
- IITC 2006
Physical, electrical, and reliability characterization of Ru for Cu interconnects
- C.-C. Yang
- T. Spooner
- et al.
- 2006
- IITC 2006
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
Extendibility of PVD barrier/seed for BEOL Cu metallization
- C.-C. Yang
- D. Edelstein
- et al.
- 2005
- IITC 2005
Integration of direct plating of Cu onto a CVD Ru liner
- S. Malhotra
- D. Canaperi
- et al.
- 2004
- AMC 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Thermal cycle reliability of stacked via structures with copper metallization and an organic low-k dielectric
- R. Filippi
- J.F. McGrath
- et al.
- 2004
- IRPS 2004
Porous ILD process development for sub 100nm integration
- K. Malone
- S.T. Chen
- et al.
- 2003
- ADMETA 2003
A high performance 0.13 μm copper BEOL technology with low-k dielectric
- R.D. Goldblatt
- B.N. Agarwala
- et al.
- 2000
- IITC 2000