Integration compatible porous SiCOH dielectrics from 45 to 22 nm
- S. Gates
- A. Grill
- et al.
- 2008
- ADMETA 2008
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68 results for Terry A. Spooner
Robust and low cost copper contact application for low power device at 32 nm-node and beyond
- Atsunobu Isobayashi
- James J. Kelly
- et al.
- 2009
- IITC 2009
The effect of material and process interactions on BEOL integration
- T. Spooner
- J.C. Arnold
- et al.
- 2009
- ECS Meeting 2009
Copper contact metallization for 22 nm and beyond
- Soon-Cheon Seo
- Chih-Chao Yang
- et al.
- 2009
- IITC 2009
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Line resistance and electromigration variations induced by hydrogen-based plasma modifications to the silicon carbonitride/copper interface
- E. Todd Ryan
- Jeremy Martin
- et al.
- 2007
- JES
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
BEOL integration of highly damage -resistant porous ultra low-k material using direct CMP and via-first process
- T. Iijima
- Q. Lin
- et al.
- 2006
- IITC 2006
Physical, electrical, and reliability characterization of Ru for Cu interconnects
- C.-C. Yang
- T. Spooner
- et al.
- 2006
- IITC 2006
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006