Fully aligned via integration for extendibility of interconnects to beyond the 7 nm nodeBenjamin D. BriggsC.B. Peethalaet al.2017IEDM 2017
Ru Liner Scaling with ALD TaN Barrier Process for Low Resistance 7 nm Cu Interconnects and beyondKoichi MotoyamaO. Van Der Stratenet al.2018IITC 2018
Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOLBenjamin D. BriggsC.B. Pcethalaet al.2018IITC 2018