Dependence of Cu electromigration resistance on selectively deposited CVD Co cap thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2013
- Microelectronic Engineering
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Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets
- G.A. Antonelli
- G. Jiang
- et al.
- 2012
- Microelectronic Engineering