Voltage polarity effects in GST-based phase change memory: Physical origins and implications
- A. Padilla
- G.W. Burr
- et al.
- 2010
- IEDM 2010
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154 results for Robert M. Shelby
Highly scalable novel access device based on Mixed Ionic Electronic Conduction (MIEC) materials for high density phase change memory (PCM) arrays
- K. Gopalakrishnan
- R.S. Shenoy
- et al.
- 2010
- VLSI Technology 2010
Amorphization of crystalline phase change material by ion implantation
- Simone Raoux
- Guy M. Cohen
- et al.
- 2010
- MRS Online Proceedings Library
Observation of the role of subcritical nuclei in crystallization of a glassy solid
- Bong-Sub Lee
- Geoffrey W. Burr
- et al.
- 2009
- Science
Characterization of phase change memory materials using phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2009
- Journal of Applied Physics
Crystallization dynamics of nitrogen-doped Ge2Sb 2Te5
- Robert M. Shelby
- Simone Raoux
- 2009
- Journal of Applied Physics
Phase change materials and their application to random access memory technology
- Simone Raoux
- Robert M. Shelby
- et al.
- 2008
- Microelectronic Engineering
Phase-change random access memory: A scalable technology
- Simone Raoux
- Geoffrey W. Burr
- et al.
- 2008
- IBM J. Res. Dev
SET characteristics of phase change bridge devices
- Daniel Krebs
- Simone Raoux
- et al.
- 2008
- MRS Spring Meeting 2008
Solution-phase deposition and nanopatterning of GeSbSe phase-change materials
- Delia J. Milliron
- Simone Raoux
- et al.
- 2007
- Nature Materials