High-Performance Devices for a 0.15-μm CMOS Technology
- G. Shahidi
- James Warnock
- et al.
- 1993
- IEEE Electron Device Letters
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123 results for Tak H. Ning
Silicon VLSI technology trends
- Tak H. Ning
- 1992
- IEMT 1992
A high performance low temperature 0.3 μm CMOS on SIMOX
- G. Shahidi
- B. Bucclot
- et al.
- 1992
- VLSI Technology 1992
A high performance BiCMOS technology using 0.25 μm CMOS and double poly 47 GHz bipolar
- G. Shahidi
- J. Warnock
- et al.
- 1992
- VLSI Technology 1992
A novel high-performance lateral bipolar on SOI
- G. Shahidi
- D.D. Tang
- et al.
- 1991
- IEDM 1991
Silicon VLSI technology--Today and tomorrow
- T.H. Ning
- 1991
- GaAs IC 1991
Submicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar Transistors
- T.C. Chen
- E. Ganin
- et al.
- 1991
- IEEE T-ED
Epitaxial-base double-poly self-aligned bipolar transistors
- E. Ganin
- T.C. Chen
- et al.
- 1990
- IEDM 1990
Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing
- G. Shahidi
- B. Davari
- et al.
- 1990
- IEDM 1990
Technology trends in sub-0.5 μm bipolar
- T.H. Ning
- 1990
- SSDM 1990