Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobilityM.M. FrankV.K. Paruchuriet al.2005VLSI-TSA 2005
Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)J. CaiK. Rimet al.2004IEDM 2004
Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOS deviceK.-L. LeeF. Cardoneet al.2004ECS Meeting 2004
In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnectsK.-L. LeeC.-K. Huet al.1995Journal of Applied Physics