Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobilityM.M. FrankV.K. Paruchuriet al.2005VLSI-TSA 2005
Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOS deviceK.-L. LeeF. Cardoneet al.2004ECS Meeting 2004
Tunable electrical properties of TaNx thin films grown by ionized physical vapor depositionMiri ChoiCatherine Dubourdieuet al.2014JVSTB
In situ scanning electron microscope comparison studies on electromigration of Cu and Cu(Sn) alloys for advanced chip interconnectsK.-L. LeeC.-K. Huet al.1995Journal of Applied Physics