Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
- N. Gong
- Malte J. Rasch
- et al.
- 2022
- IEDM 2022
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Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
- Guohan Hu
- M. G. Gottwald
- et al.
- 2017
- IEDM 2017