Growth of SiGe epitaxial quantum dots on patterned Si (001) surfaces by in situ annealing of initially conformal layersJ.M. AmatyaH. Heinrichet al.2018Journal of Applied Physics
Luminescence-center-mediated excitation as the dominant Er sensitization mechanism in Er-doped silicon-rich Si O2 filmsOleksandr SavchynForrest R. Ruhgeet al.2007Physical Review B - CMMP