Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages
- Vishal A. Tiwari
- Rama Divakaruni
- et al.
- 2016
- Japanese Journal of Applied Physics
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Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technology
- Jin-Ping Han
- Takashi Shimizu
- et al.
- 2011
- Japanese Journal of Applied Physics