Reverse active mode current characteristics of SiGe HBTs
- Jae-Sung Rieh
- Jin Cai
- et al.
- 2005
- IEEE Transactions on Electron Devices
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15 results for Andy Stricker
Scaling of SiGe heterojunction bipolar transistors
- Jae-Sung Rieh
- Andreas Stricker
- et al.
- 2005
- Proceedings of the IEEE
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps
- M. Khater
- J.-S. Rieh
- et al.
- 2004
- IEDM 2004
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
Self-aligned SiGe NPN transistors with 285 GHz f MAX and 207 GHz f T in a manufacturable technology
- B. Jagannathan
- M. Khater
- et al.
- 2002
- IEEE Electron Device Letters