Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETsK.-L. LeeM.M. Franket al.2006VLSI Technology 2006
HfO 2/metal stacks: Determination of energy level diagram, work functions & their dependence on metal depositionS. ZafarV. Narayananet al.2005VLSI Technology 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodesR. JammyV. Narayananet al.2005ISTC 2005
Electron mobility dependence of W/HFO 2 gate stacks on interfacial layer preparationA.C. CallegariP. Jamisonet al.2005ECS Meeting 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobilityM.M. FrankV.K. Paruchuriet al.2005VLSI-TSA 2005
A comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)S. ZafarM. Yanget al.2005VLSI Technology 2005
A study of negative bias temperature instability (NBTI) in pFETsSufi ZafarJames Stathiset al.2005ECS Meeting 2005
Charge trapping & NBTI in high k gate dieectric stacksSufi ZafarA.C. Callegariet al.2005ECS Meeting 2005
On the scalability and carrier transport of advanced CMOS devicesMeikei IeongLeland Changet al.2005ICICDT 2005
Systematic study of pFET Vt with Hf-based gate stacks with poly-Si and FUSI gatesE. CartierV. Narayananet al.2004VLSI Technology 2004