A 14 dBm 110-130 GHz power amplifier and doubler chain in 90 nm SiGe BiCMOS technology
- Roee Ben Yishay
- Danny Elad
- 2016
- SiRF 2016
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36 results for Roee Ben Yishay
A robust low phase noise and wide tuning range Ku band sub-integer frequency synthesizer for E-band backhaul transceivers
- Run Levinger
- Oded Katz
- et al.
- 2015
- EuMC 2015
Key components of a D-band Dicke-radiometer in 90 nm SiGe BiCMOS technology
- Roee Ben Yishay
- Evgeny Shumaker
- et al.
- 2015
- EuMIC 2015
A SiGe V-band x8 frequency multiplier with high spectral purity
- Nadav Mazor
- Oded Katz
- et al.
- 2015
- EuMIC 2015
A robust low phase noise Ku band VCO with 23.3% tuning range for E-band and V-band backhaul transceivers
- Run Levinger
- Oded Katz
- et al.
- 2015
- RFIC 2015
High-performance 81-86 GHz transceiver chipset for Point-to-Point communication in SiGe BiCMOS technology
- Roee Ben Yishay
- Oded Katz
- et al.
- 2015
- RFIC 2015
A 17.8 dBm 110-130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology
- Roee Ben Yishay
- Danny Elad
- 2015
- RFIC 2015
A high suppression frequency tripler for 60-GHz transceivers
- Nadav Mazor
- Oded Katz
- et al.
- 2015
- IMS 2015
A 122-150 GHz LNA with 30 dB gain and 6.2 dB noise figure in SiGe BiCMOS technology
- Roee Ben Yishay
- Evgeny Shumaker
- et al.
- 2015
- SiRF 2015
A 17.5-dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology
- Roee Ben Yishay
- Danny Elad
- 2014
- EuMIC 2014