Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO 2 gate dielectrics and α-Si/SiO 2 interlayers
- S.J. Koester
- E.W. Kiewra
- et al.
- 2006
- Applied Physics Letters
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Electromigration in AlCu lines: Comparison of Dual Damascene and metal reactive ion etching
- R. Filippi
- M. Gribelyuk
- et al.
- 2001
- Thin Solid Films