Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
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8 results for T. Kane
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
- Takeshi Nogami
- X. Zhang
- et al.
- 2017
- VLSI Technology 2017
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
- C. K. Hu
- James Kelly
- et al.
- 2017
- IITC 2017
Optical nanoprobe electrical microscopy
- Stephen Ippolito
- Michael Tenney
- et al.
- 2013
- ISTFA 2013
Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- Fen Chen
- Jeffrey Gambino
- et al.
- 2012
- IRPS 2012
A comparative study of ULK conduction mechanisms and TDDB characteristics for Cu interconnects with and without CoWP metal cap at 32nm technology
- F. Chen
- E. Huang
- et al.
- 2010
- IITC 2010
Damascene copper integration impact on electomigration and stress migration
- Anthony K. Stamper
- H. Baks
- et al.
- 2005
- AMC 2005
Electromigration in AlCu lines: Comparison of Dual Damascene and metal reactive ion etching
- R. Filippi
- M. Gribelyuk
- et al.
- 2001
- Thin Solid Films