A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability
- Noah Zamdmer
- Jonghae Kim
- et al.
- 2004
- VLSI Technology 2004
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36 results for Shreesh Narasimha
Application of an SOI 0.12-μm CMOS technology to SoCs with low-power and high-frequency circuits
- Jean-Olivier Plouchart
- Noah Zamdmer
- et al.
- 2003
- IBM J. Res. Dev
Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
- K. Rim
- S. Narasimha
- et al.
- 2002
- IEDM 2002
A high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
Suitability of scaled SOI CMOS for high-frequency analog circuits
- N. Zamdmer
- J.O. Plouchart
- et al.
- 2002
- ESSDERC 2002