Technology viable DC performance elements for Si/SiGe channel CMOS FinFTTG. TsutsuiRuqiang Baoet al.2016IEDM 2016
Electromigration extendibility of Cu(Mn) alloy-seed interconnects, and understanding the fundamentalsTakeshi NogamiC. Pennyet al.2012IEDM 2012
Diffusion barrier properties of very thin TaN with high nitrogen concentrationS.M. RossnagelH. Kim2003Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures