Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
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12 results for Rajasekhar Venigalla
Strained-silicon / silicon-germanium-on-insulator for high-performance CMOS : A manufacturable process for 300 mm substrates
- A. Reznicek
- S.W. Bedell
- et al.
- 2004
- ECS Meeting 2004