A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
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4 results for Bhagawan Sahu
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Silicon germanium FinFET device physics, process integration and modeling considerations (invited)
- Darsen Lu
- Pierre Morin
- et al.
- 2014
- ECSSMEQ 2014
First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance
- H. Dixit
- Chengyu Niu
- et al.
- 2017
- IEEE T-ED