Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
- S.J. Koester
- K. Rim
- et al.
- 2001
- Applied Physics Letters
Publications
Date
Featured collections
Popular topics
149 results for John A. Ott
Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects
- Q. Ouyang
- X. Chen
- et al.
- 2001
- VLSI Technology 2001
Strained Si NMOSFETs for high performance CMOS technology
- K. Rim
- S.J. Koester
- et al.
- 2001
- VLSI Technology 2001
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2000
- DRC 2000
Silicon-on-sapphire for RF Si systems 2000
- I. Lagnado
- P.R. De La Houssaye
- et al.
- 2000
- SiRF 2000
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
- P.M. Mooney
- J.O. Chu
- et al.
- 2000
- Journal of Electronic Materials
High-performance SiGe pMODFETs grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 1999
- EDMO 1999
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- Suraj J. Mathew
- Guofu Niu
- et al.
- 1999
- IEEE Electron Device Letters
X-ray diffraction analysis of SiGe/Si heterostructures on sapphire substrates
- P.M. Mooney
- J.A. Ott
- et al.
- 1998
- Applied Physics Letters