Layer transfer of bulk gallium nitride by controlled spalling
- Stephen W. Bedell
- Paul Lauro
- et al.
- 2017
- Journal of Applied Physics
Publications
Date
Featured collections
Popular topics
149 results for John A. Ott
High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes
- Shu Jen Han
- Jianshi Tang
- et al.
- 2017
- Nature Nanotechnology
High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI-TSA 2017
High-Q magnetic inductors for high efficiency on-chip power conversion
- Naigang Wang
- Bruce Doris
- et al.
- 2016
- IEDM 2016
Prospects of high-Ge-content strained SiGe for advanced FinFET generations
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2016
- PRiME/ECS Meeting 2016
Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
- Pouya Hashemi
- Kam-Leung Lee
- et al.
- 2016
- VLSI Technology 2016
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- Pouya Hashemi
- Takashi Ando
- et al.
- 2016
- VLSI Technology 2016
Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2ZnSnSe4 Absorber
- Talia S. Gershon
- Kasra Sardashti
- et al.
- 2016
- Advanced Energy Materials
Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)
- R. Muthinti
- Nicolas Loubet
- et al.
- 2016
- SPIE Advanced Lithography 2016
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Circuits 2015