High-mobility High-Ge-Content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Technology 2015
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149 results for John A. Ott
Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
- Isaac Lauer
- Nicolas Loubet
- et al.
- 2015
- VLSI Technology 2015
Strained-SiGe channel FinFETs for high-performance CMOS: Opportunities and challenges
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2015
- ECS Meeting 2015 Chicago
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- IEDM 2014
Vertical thinking in blue light emitting diodes: GaN-on-graphene technology
- Can Bayram
- Jeehwan Kim
- et al.
- 2015
- SPIE OPTO 2015
Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)
- Can Bayram
- John A. Ott
- et al.
- 2015
- SPIE OPTO 2015
Strain-driven mound formation of substrate under epitaxial nanoparticles
- Tanya Gupta
- James B. Hannon
- et al.
- 2014
- Nano Letters
Strained SiGe on insulator FinFETs: A P-FET candidate for 10nm node (Invited)
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- ECSSMEQ 2014
Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene
- Jeehwan Kim
- Can Bayram
- et al.
- 2014
- Nature Communications
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014