Strain loss in epitaxial Si: C films induced by phosphorus diffusion
- B.F. Yang
- J.P. De. Souzab
- et al.
- 2008
- ECS Meeting 2008
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97 results for Katherine Saenger
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
- M. Hamaguchi
- H. Yin
- et al.
- 2008
- VLSI Technology 2008
Effect of end-of-range defects on device leakage in direct silicon bonded (DSB) technology
- Haizhou Yin
- M. Hamaguchi
- et al.
- 2008
- VLSI-TSA 2008
Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures
- Conal E. Murray
- K.L. Saenger
- et al.
- 2008
- Journal of Applied Physics
Effect of elevated implant temperature on amorphization and activation in as-implanted silicon-on-insulator layers
- Katherine L. Saenger
- Stephen W. Bedell
- et al.
- 2008
- MRS Spring Meeting 2008
Effects of patterned, stressed SiN overlayers on Si solid phase epitaxy
- K.L. Saenger
- K.E. Fogel
- et al.
- 2008
- Applied Physics Letters
Mixed orientation Si-Si interfaces by hydrophilic bonding and high temperature oxide dissolution
- K.L. Saenger
- J.P. De Souza
- et al.
- 2008
- JES
Understanding mask-edge and trench-edge defects produced during solid phase epitaxy of amorphized regions in (001) and (Oil) Si: Observations and model
- Katherine L. Saenger
- Haizhou Yin
- et al.
- 2007
- MRS Spring 2007
Scalability of Direct Silicon Bonded (DSB) technology for 32nm node and beyond
- Haizhou Yin
- C.Y. Sung
- et al.
- 2007
- VLSI Technology 2007
Single-crystalline Germanium thin films by electrodeposition and solid-phase epitaxy
- Q. Huang
- S.W. Bedell
- et al.
- 2007
- Electrochemical and Solid-State Letters