An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- V. Djara
- Veeresh Deshpande
- et al.
- 2015
- VLSI Technology 2015
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7 results for Jean-Michel Hartmann
Wafer bonding: An integration route for hybrid III-V/SiGe CMOS on 300mm
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- ISSWB 2014
III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
- Emanuele Uccelli
- Nicolas Daix
- et al.
- 2014
- ITNG 2014
SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters
- Nils von den Driesch
- Daniela Stange
- et al.
- 2017
- Small
Optically Pumped GeSn Microdisk Lasers on Si
- Daniela Stange
- Stephan Wirths
- et al.
- 2016
- ACS Photonics
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
Study of HCl and secco defect etching for characterization of thick sSOI
- A. Abbadie
- S.W. Bedell
- et al.
- 2007
- JES