Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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23 results for Detlev Grützmacher

Fabrication of three-terminal resonant tunneling devices in silicon-based material
- - A. Zaslavsky
  - K.R. Milkove
  - et al.
- 1994
- Applied Physics Letters
Cyclotron effective mass of holes in Si_1-xGe_x/Si quantum wells: Strain and nonparabolicity effects
- - J.-P. Cheng
  - V.P. Kesan
  - et al.
- 1994
- Applied Physics Letters
Cyclotron effective mass of holes in strained Si_1-xGe_x/Si quantum well structures
- - J.-P. Cheng
  - V.P. Kesan
  - et al.
- 1994
- Surface Science
Valence band Landau level mixing and anisotropy in Si_1-xGe_x investigated by resonant magnetotunneling
- - A. Zaslavsky
  - D.A. Grützmacher
  - et al.
- 1994
- Surface Science
Cyclotron resonance studies of two-dimensional holes in strained Si _1-xGe_x/Si quantum wells
- - J.-P. Cheng
  - V.P. Kesan
  - et al.
- 1993
- Applied Physics Letters
Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere
- - D.A. Grützmacher
  - T.O. Sedgwick
  - et al.
- 1993
- Applied Physics Letters
In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells
- - A. Zaslavsky
  - T.P. Smith III
  - et al.
- 1993
- Physical Review B
Observation of valence-band Landau-level mixing by resonant magnetotunneling
- - A. Zaslavsky
  - D.A. Grützmacher
  - et al.
- 1993
- Physical Review B
Atomic layer doping for Si
- - D.A. Grützmacher
  - K. Eberl
  - et al.
- 1993
- Thin Solid Films
Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition
- - D.A. Grützmacher
  - T.O. Sedgwick
  - et al.
- 1993
- Journal of Electronic Materials