Towards schottky-barrier source/drain MOSFETs
- Mikael Östling
- Valur Gudmundsson
- et al.
- 2008
- ICSICT 2008
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9 results for Mikael Östling
New materials for post-Si computing
- C.W. Liu
- Mikael Östling
- et al.
- 2014
- MRS Bulletin
Formation of nickel germanides from Ni layers with thickness below 10 nm
- Lukas Jablonka
- Tomas Kubart
- et al.
- 2017
- JVSTB
Interaction of NiSi with dopants for metallic source/drain applications
- Jun Luo
- Zhi-Jun Qiu
- et al.
- 2010
- Journal of Vacuum Science and Technology B
Electrical evaluation of high-temperature effects on gate oxide integrity in a self-aligned CoSi2 MOS process
- T.E. Karlin
- S.-L. Zhang
- et al.
- 1993
- Applied Surface Science
Morphological instabilities of nickel and cobalt silicides on silicon
- S. Nygren
- D. Caffin
- et al.
- 1991
- Applied Surface Science
Chromium germanides: formation, structure and properties
- N. Lundberg
- M. Östling
- et al.
- 1991
- Applied Surface Science
Summary Abstract: Resistivity-process relationships in TiSi2 formed from Ti-Si reaction couples
- H.-O. Blom
- S. Berg
- et al.
- 1985
- JVSTA
Summary Abstract: Titanium silicide films prepared by reactive sputtering
- V. Deline
- F.M. d’Heurle
- 1985
- JVSTA