Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies
- M. Bhuiyan
- M. Kim
- et al.
- 2021
- IEDM 2021
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4 results for Shahab Siddiqui
Deposited ALD SiO2 high-k/metal gate interface for high voltage analog and I/O devices on next generation alternative channels and FINFET device structures
- S. Siddiqui
- M.M. Chowdhury
- et al.
- 2013
- ECS Meeting 2013
Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
- Shahab Siddiqui
- Min Dai
- et al.
- 2017
- JVSTB
Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness
- Min Dai
- Yanfeng Wang
- et al.
- 2013
- Journal of Applied Physics