Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory applicationH.Y. ChengMatthew Brightskyet al.2013IEDM 2013
A scalable volume-confined phase change memory using physical vapor depositionS.C. LaiS. Kimet al.2013VLSI Technology 2013
Optimization of programming current on endurance of phase change memorySangbum KimPei-Ying Duet al.2012VLSI-TSA 2012
A low power phase change memory using thermally confined TaN/TiN bottom electrodeJ.Y. WuMatthew Breitwischet al.2011IEDM 2011
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change materialH.Y. ChengT.H. Hsuet al.2011IEDM 2011
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systemsH.L. LungMatthew Breitwischet al.2011VLSI Technology 2011
The impact of hole-induced electromigration on the cycling endurance of phase change memoryM. H. LeeR. Cheeket al.2010IEDM 2010
Understanding amorphous states of phase-change memory using frenkel-poole modelY.H. ShihM.H. Leeet al.2009IEDM 2009
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memoryY.H. ShihJ.Y. Wuet al.2008IEDM 2008