Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO2 gate stack systems
- Yoshinori Tsuchiya
- Nathaniel Berliner
- et al.
- 2011
- Japanese Journal of Applied Physics
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.