A phase change memory cell with metallic surfactant layer as a resistance drift stabilizer
- Sangbum Kim
- N. Sosa
- et al.
- 2013
- IEDM 2013
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2 results for Daisuke Mori
A Phase Change Memory Cell With Metal Nitride Liner as a Resistance Stabilizer to Reduce Read Current Noise for MLC Optimization
- Sangbum Kim
- Norma Sosa
- et al.
- 2016
- IEEE T-ED