Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithographyNobuhiro OkaiErin Lavigneet al.2016J. Micro/Nanolithogr. MEMS MOEMS
Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithographyNobuhiro OkaiErin Lavigneet al.2015SPIE Advanced Lithography 2015
Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithographyNobuhiro OkaiErin Lavigneet al.2014SPIE Advanced Lithography 2014