Influence of He implantation conditions on strain relaxation and threading dislocation density in Si0.8Ge0.2 virtual substrates
- J. Cai
- P.M. Mooney
- et al.
- 2004
- MRS Proceedings 2004
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10 results for Silke Christiansen
Self-assembled semiconductor nanostructures: Climbing up the ladder of order
- O.G. Schmidt
- S. Kiravittaya
- et al.
- 2002
- Surface Science
Characteristics of low-k and ultralow-k PECVD deposited SiCOH films
- A. Grill
- V.V. Patel
- et al.
- 2002
- MRS Proceedings 2002
Laterally aligned Ge/Si islands: A new concept for faster field-effect transistors
- O.G. Schmidt
- U. Denker
- et al.
- 2002
- Materials Science and Engineering: B
Strain relaxation mechanisms in He+-implanted and annealed Si1-xGex layers on Si(001) substrates
- S. Christiansen
- P.M. Mooney
- et al.
- 2001
- MRS Proceedings 2001
Inorganic photovoltaics - Planar and nanostructured devices
- Jeyakumar Ramanujam
- Amit Verma
- et al.
- 2016
- Progress in Materials Science
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
Strain relaxation and threading dislocation density in helium-implanted and annealed Si 1-xGe x/Si( 100) heterostructures
- J. Cai
- P.M. Mooney
- et al.
- 2004
- Journal of Applied Physics
Composition of self-assembled Ge/Si islands in single and multiple layers
- O.G. Schmidt
- U. Denker
- et al.
- 2002
- Applied Physics Letters
Scanning x-ray microtopographs of misfit dislocations at SiGe/Si interfaces
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 2001
- Applied Physics Letters