Aggressively scaled strained-silicon-on-insulator undoped-body High-κ/Metal-Gate nFinFETs for high-performance logic applications
- Kingsuk Maitra
- Ali Khakifirooz
- et al.
- 2011
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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39 results for Ali Khakifirooz
High-performance partially depleted SOI PFETs with in situ doped sige raised source/drain and implant-free extension
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2011
- IEEE Electron Device Letters
Silicon germanium FinFET device physics, process integration and modeling considerations (invited)
- Darsen Lu
- Pierre Morin
- et al.
- 2014
- ECSSMEQ 2014
Strained Si1-xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- VLSI Technology 2014
Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- K. Cheng
- S.-C. Seo
- et al.
- 2014
- VLSI Technology 2014
Dielectric isolated FinFETs on bulk substrate
- Darsen Lu
- Kangguo Cheng
- et al.
- 2014
- S3S 2014
Elastic relaxation in intrinsically-strained Fins: Simulations, physical and electrical characterization
- F. Allibert
- Pierre Morin
- et al.
- 2014
- S3S 2014
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- A. Khakifirooz
- R. Sreenivasan
- et al.
- 2013
- S3S 2013
Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (Invited)
- Bruce Doris
- Kangguo Cheng
- et al.
- 2013
- VLSI-TSA 2013
Evaluation of sSOI wafers for 22nm node and beyond
- F. Allibert
- Kangguo Cheng
- et al.
- 2012
- S3S 2012