Temperature and field interrelation study of low-k TDDB for Cu interconnects with and without liner - New insights to the roles of Cu for a competing breakdown process
- Fen Chen
- Michael Shinosky
- et al.
- 2013
- IRPS 2013
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41 results for F. Chen
Copper through silicon via (TSV) for 3D integration
- C. Kothandaraman
- B. Himmel
- et al.
- 2012
- IRPS 2012
Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB
- Fen Chen
- Jeffrey Gambino
- et al.
- 2012
- IRPS 2012
In-situ metal/dielectric capping process for electromigration enhancement in Cu interconnects
- Chih-Chao Yang
- Fen Chen
- et al.
- 2012
- IITC 2012
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
Co capping layers for Cu/low-k interconnects
- C.-C. Yang
- P. Flaitz
- et al.
- 2010
- ADMETA 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
A comparative study of ULK conduction mechanisms and TDDB characteristics for Cu interconnects with and without CoWP metal cap at 32nm technology
- F. Chen
- E. Huang
- et al.
- 2010
- IITC 2010
Critical ultra low-k TDDB reliability issues for advanced CMOS technologies
- F. Chen
- M. Shinosky
- et al.
- 2009
- IRPS 2009
Material and process for advanced Cu/ULK integration
- Chih-Chao Yang
- Daniel C. Edelstein
- et al.
- 2008
- ADMETA 2008