Nickel suicide thermal stability on polycrystalline and single crystalline siliconE.G. ColganJ.P. Gambinoet al.1996Materials Chemistry and Physics
A 0.6 µm2 256Mb Trench DRAM Cell with Self-Aligned Buried Strap (BEST)L.A. NesbitJ. Alsmeieret al.1993IEDM 1993
Diffusion barrier properties of TiN films for submicron silicon bipolar technologiesE. KobedaJ. Warnocket al.1992Journal of Applied Physics