Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET
- Miaomiao Wang
- Zuoguang Liu
- et al.
- 2015
- IRPS 2015
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Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress
- Y. Wu
- Chia-Yu Chen
- et al.
- 2015
- Journal of Applied Physics