Hot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)
- T.N. Theis
- B.D. Parker
- et al.
- 1986
- Applied Physics Letters
Publications
167 results for Paul Solomon
Determination of the conduction-band discontinuity between in 0.53ga0.47as/in0.52al0.48as using n+-ingaas/inalas/n--ingaas capacitors
- C.K. Peng
- A. Ketterson
- et al.
- 1986
- Journal of Applied Physics
Probe pressure effect on tunneling current through a GaAs-(Al,Ga)As-GaAs heterojunction barrier
- P. Solomon
- S.L. Wright
- et al.
- 1986
- Applied Physics Letters
Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As
- N. Caswell
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
Properties of and prospects for the GaAs gate heterojunction FET
- P. Solomon
- 1986
- Surface Science
Trapping in AlGaAs/GaAs modulation-doped field effect transistors at room temperature
- M.I. Nathan
- P.M. Mooney
- et al.
- 1986
- Surface Science
PERPENDICULAR TRANSPORT MEASUREMENTS IN GaAs/(Al,Ga)As/GaAs HETEROSTRUCTURES.
- P. Solomon
- S.L. Wright
- 1986
- IEEE T-ED
Perpendicular transport across (Al,Ga)As and the Γ to X transition
- Paul M. Solomon
- Steven L. Wright
- et al.
- 1986
- Superlattices and Microstructures
SELF-ALIGNED PROCESSES FOR THE GaAs GATE FET.
- H. Baratte
- D.C. La Tulipe
- et al.
- 1985
- IEDM 1985
Direct measurement of the energy distribution of hot electrons in silicon dioxide
- S.D. Brorson
- D.J. DiMaria
- et al.
- 1985
- Journal of Applied Physics