Mutual drag of two- and three-dimensional electron gases in heterostuctures
- B. Laikhtman
- P. Solomon
- 1990
- Physical Review B
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163 results for Paul Solomon
Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy
- M.A. Tischler
- T.F. Kuech
- et al.
- 1989
- Applied Physics Letters
IIA-2 Saturable Charge FET
- P. Solomon
- D.J. Frank
- et al.
- 1987
- IEEE T-ED
Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructures
- H. Baratte
- T.N. Jackson
- et al.
- 1987
- Applied Physics Letters
Probe pressure effect on tunneling current through a GaAs-(Al,Ga)As-GaAs heterojunction barrier
- P. Solomon
- S.L. Wright
- et al.
- 1986
- Applied Physics Letters
Determination of the conduction-band discontinuity between in 0.53ga0.47as/in0.52al0.48as using n+-ingaas/inalas/n--ingaas capacitors
- C.K. Peng
- A. Ketterson
- et al.
- 1986
- Journal of Applied Physics
Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As
- N. Caswell
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
Hot-electron capture to DX centers in AlxGa1-xAs at low Al mole fractions (x<0.2)
- T.N. Theis
- B.D. Parker
- et al.
- 1986
- Applied Physics Letters
Properties of and prospects for the GaAs gate heterojunction FET
- P. Solomon
- 1986
- Surface Science
Trapping in AlGaAs/GaAs modulation-doped field effect transistors at room temperature
- M.I. Nathan
- P.M. Mooney
- et al.
- 1986
- Surface Science