Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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9 results for Babar Khan

High performance 14nm SOI FinFET CMOS technology with 0.0174μm² embedded DRAM and 15 levels of Cu metallization
- - C.-H.C-H. Lin
  - Brian Greene
  - et al.
- 2014
- IEDM 2014
A 0.039um² high performance eDRAM cell based on 32nm high-K/metal SOI technology
- - Nauman Z. Butt
  - Kevin McStay
  - et al.
- 2010
- IEDM 2010
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- - G. Wang
  - D. Anand
  - et al.
- 2009
- IEDM 2009
A 500MHz random cycle 1.5ns-latency, SOI embedded DRAM macro featuring a 3T micro sense amplifier
- - John Barth
  - William Reohr
  - et al.
- 2007
- ISSCC 2007
A 0.127 μm² high performance 65 nm SOI based embedded DRAM for on-processor applications
- - G. Wang
  - K. Cheng
  - et al.
- 2006
- IEDM 2006
Essential edge protection techniques for successful multi-wafer stacking
- - Joshua Rubin
  - Kevin Winstel
  - et al.
- 2015
- S3S 2015
Characterization of novel TiN/HfO₂ metal insulator semiconductor stack for 32nm eDRAM
- - Puneet Goyal
  - Sneha Gupta
  - et al.
- 2010
- IEEE International SOI Conference 2010
A 0.168μm ²/0.11μm ² highly scalable high performance embedded DRAM cell for 90/65-nm logic applications
- - G. Wang
  - P. Parries
  - et al.
- 2005
- VLSI Technology 2005
A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier
- - John Barth
  - William R. Reohr
  - et al.
- 2008
- IEEE Journal of Solid-State Circuits