High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
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9 results for Babar Khan
A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology
- Nauman Z. Butt
- Kevin McStay
- et al.
- 2010
- IEDM 2010
Scaling deep trench based eDRAM on SOI to 32nm and beyond
- G. Wang
- D. Anand
- et al.
- 2009
- IEDM 2009
A 500MHz random cycle 1.5ns-latency, SOI embedded DRAM macro featuring a 3T micro sense amplifier
- John Barth
- William Reohr
- et al.
- 2007
- ISSCC 2007
A 0.127 μm2 high performance 65 nm SOI based embedded DRAM for on-processor applications
- G. Wang
- K. Cheng
- et al.
- 2006
- IEDM 2006
Essential edge protection techniques for successful multi-wafer stacking
- Joshua Rubin
- Kevin Winstel
- et al.
- 2015
- S3S 2015
Characterization of novel TiN/HfO2 metal insulator semiconductor stack for 32nm eDRAM
- Puneet Goyal
- Sneha Gupta
- et al.
- 2010
- IEEE International SOI Conference 2010
A 0.168μm 2/0.11μm 2 highly scalable high performance embedded DRAM cell for 90/65-nm logic applications
- G. Wang
- P. Parries
- et al.
- 2005
- VLSI Technology 2005
A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier
- John Barth
- William R. Reohr
- et al.
- 2008
- IEEE Journal of Solid-State Circuits