Fabrication of high performance 512Kb SRAMs in 0.25 μm CMOS technology using x-ray lithography
- R. Viswanathan
- David Seeger
- et al.
- 1994
- Microelectronic Engineering
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26 results for Thomas Bucelot
Temperature dependent transport measurements on strained Si/Si1-xGex resonant tunneling devices
- Ulf Gennser
- V.P. Kesan
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A 4-Mb Low-Temperature DRAM
- Rick L. Mohler
- Christopher W. Long
- et al.
- 1991
- IEEE Journal of Solid-State Circuits
A 12-ns Low-Temperature DRAM
- Walter H. Henkels
- Nicky C. C. Lu
- et al.
- 1989
- IEEE T-ED
Degradation of bipolar transistors under high current stress at 300 K
- R.A. Wachnik
- T. Bucelot
- et al.
- 1988
- Journal of Applied Physics
A Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi2
- Fang-Shi J. Lai
- L.K. Wang
- et al.
- 1986
- IEEE T-ED