Effect of subvolume excitation and spin-torque efficiency on magnetic switching
- Jonathan Z. Sun
- R.P. Robertazzi
- et al.
- 2011
- Physical Review B - CMMP
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147 results for William Gallagher
High temperature annealing stability of magnetic properties in MgO-based perpendicular magnetic tunnel junction stacks with CoFeB polarizing layer
- M. Tofizur Rahman
- Andrew Lyle
- et al.
- 2011
- Journal of Applied Physics
A study of write margin of spin torque transfer magnetic random access memory technology
- Tai Min
- Qiang Chen
- et al.
- 2010
- IEEE Transactions on Magnetics
Generation of local magnetic fields at megahertz rates for the study of domain wall propagation in magnetic nanowires
- Bastiaan Bergman
- Rai Moriya
- et al.
- 2009
- Applied Physics Letters
A three-terminal spin-torque-driven magnetic switch
- J.Z. Sun
- M.C. Gaidis
- et al.
- 2009
- Applied Physics Letters
Fabrication and characterization of MgO-based magnetic tunnel junctions for spin momentum transfer switching
- Solomon Assefa
- J. Nowak
- et al.
- 2007
- Journal of Applied Physics
Theory for symmetric toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2007
- Applied Physics Letters
Materials and devices for reduced switching field toggle magnetic random access memory
- D.C. Worledge
- P.L. Trouilloud
- et al.
- 2006
- Journal of Applied Physics
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
- William J. Gallagher
- Stuart S.P. Parkin
- 2006
- IBM J. Res. Dev
Two-level BEOL processing for rapid iteration in MRAM development
- Michael C. Gaidis
- Eugene J. O'Sullivan
- et al.
- 2006
- IBM J. Res. Dev