Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- Takashi Ando
- Tenko Yamashita
- et al.
- 2015
- IEDM 2015
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A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- Tenko Yamashita
- S. Mehta
- et al.
- 2015
- VLSI Technology 2015
Atomic layer deposition of sidewall spacers: Process, equipment and integration challenges in state-of-the-art logic technologies
- Michael Belyansky
- Richard Conti
- et al.
- 2014
- ECS Meeting 2014