Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performanceIsaac LauerNicolas Loubetet al.2015VLSI Technology 2015
Towards electrical testable soi devices using directed self-assembly for fin formationChi Chun LiuCristina Estrada-Raygozaet al.2014SPIE Advanced Lithography 2014
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETsA. KhakifiroozR. Sreenivasanet al.2013S3S 2013
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